Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy

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dc.contributor.authorSilva, S. Filipe Covre da
dc.contributor.authorLanzoni, E.M.
dc.contributor.authorMalachias, A.
dc.contributor.authorDeneke, Ch.
dc.date.accessioned2018-08-23T13:34:17Z
dc.date.available2018-08-23T13:34:17Z
dc.date.issued2015-09-01
dc.description.abstractPartly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.en
dc.formatpdfpt-BR
dc.identifier.issn0022-0248
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2015.02.008
dc.identifier.urihttp://www.locus.ufv.br/handle/123456789/21380
dc.language.isoengpt-BR
dc.publisherJournal of Crystal Growthpt-BR
dc.relation.ispartofseriesvolume 425, páginas 39-42, setembro 2015pt-BR
dc.rightsElsevier B.V.pt-BR
dc.subjectA1. Patterned substratept-BR
dc.subjectA3. Molecular beam epitaxypt-BR
dc.subjectB2. Freestanding membranespt-BR
dc.subjectInAs growthpt-BR
dc.titleOvergrowth of wrinkled InGaAs membranes using molecular beam epitaxyen
dc.typeArtigopt-BR

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