Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

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dc.contributor.authorAziz, M.
dc.contributor.authorMesli, A.
dc.contributor.authorFelix, J.F.
dc.contributor.authorJameel, D.
dc.contributor.authorAl Saqri, N.
dc.contributor.authorTaylor, D.
dc.contributor.authorHenini, M.
dc.date.accessioned2018-08-23T11:54:06Z
dc.date.available2018-08-23T11:54:06Z
dc.date.issued2015-08-15
dc.description.abstractPost-growth annealing treatments in the range 400–600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V), capacitance–frequency (C–F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.en
dc.formatpdfpt-BR
dc.identifier.issn00220248
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2015.04.039
dc.identifier.urihttp://www.locus.ufv.br/handle/123456789/21358
dc.language.isoengpt-BR
dc.publisherJournal of Crystal Growthpt-BR
dc.relation.ispartofseriesv. 424, p. 5- 10, august 2015pt-BR
dc.rightsElsevier B.V.pt-BR
dc.subjectA1. Defectspt-BR
dc.subjectA1. EL2pt-BR
dc.subjectA1. Interfacial misfitpt-BR
dc.subjectB1. Gallium arsenidept-BR
dc.titleEffect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructuresen
dc.typeArtigopt-BR

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