Magnetotunneling spectroscopy of a biased triple-barrier semiconductor heterostructure
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Data
2006-02-17
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Superlattices and Microstructures
Resumo
In this work we describe a magnetotunneling spectroscopy technique for probing the localization degree of two-dimensional states and mapping the subbands in the active region of a resonant-tunneling semiconductor heterostructure. The reported experimental data consist of the low-temperature tunneling current traces of an asymmetric triple-barrier structure measured by sweeping an in-plane magnetic field up to 10 T. According to our interpretation model, the main features observed in the tunnel current traces are due to the field-induced resonant transitions between two-dimensional states at the crossing region between dispersion curves. The data reveals the highly localized nature of the quantum states in an asymmetric double-quantum-well structure even for those with very narrow middle barriers.
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Magnetotunneling spectroscopy, Resonant tunneling, Superlattice