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https://locus.ufv.br//handle/123456789/22226
Tipo: | Artigo |
Título: | Effect of gamma radiation on the electrical properties of polyaniline/silicon carbide heterojunctions |
Autor(es): | Felix, Jorlandio F. Cunha, Diego L. da Aziz, Mohsin Silva Jr., Eronides F. da Taylor, David Henini, Mohamed Azevedo, Walter M. de |
Abstract: | Polyaniline thin films have been deposited by a very simple technique on p-type Silicon Carbide (SiC) substrates to fabricate heterojunctions devices with good electrical properties. In this work two heterojunctions devices of Polyaniline (PANI) on p-type 4H–SiC and 6H–SiC substrates were electrically characterized using current- voltage (I-V) in the temperature range 20–430 K Capacitance–frequency (C-f) measurements. Furthermore, impedance and capacitance measurements are carried out to study the effect of gamma irradiation on these devices. Additionally, we demonstrate not only the ease of fabrication of PANI/p-SiC heterostructures, but also we show strong indication that these heterostructures have potential applications as sensors of gamma irradiation. |
Palavras-chave: | Polyaniline Silicon carbide Heterojunction Gamma radiation Sensor |
Editor: | Radiation Measurements |
Tipo de Acesso: | Elsevier Ltd. |
URI: | https://doi.org/10.1016/j.radmeas.2014.05.014 http://www.locus.ufv.br/handle/123456789/22226 |
Data do documento: | 29-Mai-2014 |
Aparece nas coleções: | Artigos |
Arquivos associados a este item:
Arquivo | Descrição | Tamanho | Formato | |
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artigo.pdf Until 2100-12-31 | texto completo | 1,08 MB | Adobe PDF | Visualizar/Abrir ACESSO RESTRITO |
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