Use este identificador para citar ou linkar para este item: https://locus.ufv.br//handle/123456789/22226
Tipo: Artigo
Título: Effect of gamma radiation on the electrical properties of polyaniline/silicon carbide heterojunctions
Autor(es): Felix, Jorlandio F.
Cunha, Diego L. da
Aziz, Mohsin
Silva Jr., Eronides F. da
Taylor, David
Henini, Mohamed
Azevedo, Walter M. de
Abstract: Polyaniline thin films have been deposited by a very simple technique on p-type Silicon Carbide (SiC) substrates to fabricate heterojunctions devices with good electrical properties. In this work two heterojunctions devices of Polyaniline (PANI) on p-type 4H–SiC and 6H–SiC substrates were electrically characterized using current- voltage (I-V) in the temperature range 20–430 K Capacitance–frequency (C-f) measurements. Furthermore, impedance and capacitance measurements are carried out to study the effect of gamma irradiation on these devices. Additionally, we demonstrate not only the ease of fabrication of PANI/p-SiC heterostructures, but also we show strong indication that these heterostructures have potential applications as sensors of gamma irradiation.
Palavras-chave: Polyaniline
Silicon carbide
Heterojunction
Gamma radiation
Sensor
Editor: Radiation Measurements
Tipo de Acesso: Elsevier Ltd.
URI: https://doi.org/10.1016/j.radmeas.2014.05.014
http://www.locus.ufv.br/handle/123456789/22226
Data do documento: 29-Mai-2014
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